International Rectifier Introduces Power Management Devices

11 May 2000

International Rectifier Introduces Power Management Devices That Maximize Battery Life

    EL SEGUNDO, Calif.--May 11, 2000--International Rectifier today introduced four new 12- and 20-volt P-channel HEXFET(R) power MOSFETs, which set new battery management and power conversion efficiency standards in the TSSOP-8 package.
    For example, the 12-volt IRF7701 is a MOSFET with 11 milliohms RDS(on) at 4.5 volts, 21 percent better than competing devices. Lower RDS(on) contributes to higher power system efficiency. Higher power system efficiency leads to longer operating life for portable, battery-operated equipment, such as cell phones, digital cameras, notebook computers and other small electronic products.
    "Using IR's new IRF7701, IRF7702, IRF7750 and IRF7700 HEXFET power MOSFETs in new or existing designs can lead to smaller and more efficient products," says Jorge Llorens, technical marketing manager, Portable Products.
    "The addition of this new package style not only shows IR's commitment to the portable and mobile marketplace but also allows IR to offer one of the broadest ranges of power MOSFET devices in the industry. This enables the designer to use the minimum footprint for the performance required."
    The TSSOP-8 package is about 35 percent smaller than the industry-standard SO-8. IR's silicon technology makes the smaller TSSOP-8 devices perform as well as many of the larger SO-8-packaged devices.
    In fact, the new 12-volt TSSOP-8 devices have guaranteed RDS(on) performance with a gate voltage of 1.8V. This efficiency guarantee helps designers maximize battery life and simplifies circuits, since an additional boost circuit may not be required.
    Samples and production quantities are available immediately. Pricing is 95 cents each for the IRF702, and $1.08 each for the IRF7700, IRF7701 and IRF7750, in 10,000-unit quantities.
    Data sheets are available on the IR Web site, http://www.irf.com.