HEXFET MOSFETs Maximize DC-DC Converter Efficiency
5 May 2000
International Rectifier HEXFET MOSFETs Maximize DC-DC Converter Efficiency in Distributed Power Systems
EL SEGUNDO, Calif.--May 5, 2000--Isolated DC-DC Converters Using IR's New Devices
International Rectifier announced a new series of more than 40 DC-DC converter-specific HEXFET(R) power MOSFETs that enable 85 percent-plus efficiency in sub-two volt power systems.
The new devices maximize performance in distributed power supplies used in telecom systems, network servers and desktop computers with advanced microprocessors from AMD(R), Intel(R) and others. Distributed power systems use several DC-DC converters to produce different operating voltages for the various sub-systems in today's computers and other electronic equipment.
"In the fast-paced DC-DC converter marketplace, customers need outstanding efficiency to sell their products," said Carl Blake, Director of Strategic Marketing for MOSFETs. "IR application-specific devices allow customers to achieve the highest possible performance at a range of power levels across their entire product line."
IR's new DC-DC conversion-specific MOSFETs provide many benefits for power system designers. For example, because efficiency is increased, overall DC-DC converter cost can be decreased by using less expensive Schottky diodes for output rectification. More efficiency means less heat, so smaller heat sinks may be used or even eliminated. And more efficiency means that smaller passive components such as transformers and inductors can be reduced.
The new power MOSFETs create high-efficiency isolated and non-isolated DC-DC converter circuits in several configurations, including high-current, multiphase buck converters.
The new primary- and secondary-side MOSFETs are optimized for fast switching with low RDS(on) (on-resistance) and low Qg and Qgs (gate charge), with Vgs (gate threshold) ratings to 30V.
The primary-side MOSFETs are designed for converters with 24 or 48V inputs and ratings greater than 10W, while the secondary-side devices are optimized for isolated conversion with cross-coupled and IC-driven synchronous rectification for less than 3.3V output. Package styles include industry-standard SO-8, D-Pak, I-Pak, TO-220, D2Pak and IR's exclusive SuperD2Pak(TM).
Pricing and Availability
Pricing starts at US $0.64 each in 10,000-unit quantities. Production will commence by June 2000.
More information on the IR DC-DC converter HEXFET power MOSFET line is available from the dedicated DC-DC conversion Web site: http://www.irf.com/DCDC/.