Intersil's MOSFETs Target Applications with Full Device Capability
13 September 1999
Intersil's Latest Automotive MOSFETs Target Applications Requiring Full Device Capability at Low Gate Voltages INTERSIL LOGO Intersil Corporation logo. (PRNewsFoto)[HD] MELBOURNE, FL USA 08/16/1999
- New 60- and 100-Volt MOSFET Families Include 24 Discrete Devices
- UltraFET(TM) Technology Offers Superior Performance at Higher
Breakdown Voltages
PALM BAY, Fla., Sept. 10 -- Intersil Corp. today added to its
portfolio of advanced logic level MOSFETs for the automotive market, unveiling
its new 60- and 100-volt Logic Level N-channel UltraFET MOSFET families.
Together, the 60V and 100V families account for 24 discrete devices.
Manufactured in Intersil's state-of-the-art eight-inch discrete power wafer
fab in Mountaintop, Pennsylvania, UltraFET is the company's latest MOSFET
technology, a planar process with high channel density.
(Photo: http://www.newscom.com/cgi-bin/prnh/19990816/PHM023 )
The 60V (HUF764xx) family and 100V (HUF766xx) family of logic level
devices are the latest additions to Intersil's automotive MOSFET family
targeting applications that require full device capability at low gate drive
voltages. The 60V family includes 18 discrete devices while the 100V family
features six devices. With a threshold between 1-2V, the devices are fully on
with 5V on the gate. This low threshold design allows the MOSFETs to be
driven directly by a signal from the microprocessor output, enabling
applications in the 5V regulated supply voltage control circuit environment
and low battery and cold crank conditions.
Intersil's advanced UltraFET process technology achieves the lowest
possible on-resistance per silicon area, and other capabilities resulting in
unparalleled device performance. The process also enables all the 60V and
100V devices to withstand high peak currents and energy in the avalanche mode
that is essential when switching inductive loads. Designed for use in
applications where efficiency, ruggedness and high quality are crucial, the
UltraFET process technology demonstrates itself well in automotive
applications requiring high power such as standard and direct injection, anti-
lock braking systems (ABS), high intensity discharge headlight systems (HID)
and electric motor control.
The high channel density of the UltraFET process enables rds(on)
performance as low as 9.5 milliohm in a TO-220 and D2Pak (TO-263) and
27 milliohm in a D-Pak (TO-252) at a BVdss of 60V, and rds(on) performance as
low as 15 milliohm in TO-220 and TO-263 and 53 milliohm in TO-252 at a
breakdown voltage of 100V.
All Intersil UltraFET devices are fully compliant with the latest AEC
Q101 specification, including the recently added preconditioning with forced
moisture penetration. Intersil's Power Discrete facilities are also
QS9000 certified.
About Intersil Corporation
Intersil Corporation uses analog, mixed-signal, power and radiation-
hardening technologies to develop advanced integrated circuits and discrete
semiconductors for high-growth segments of the communications, power and
space/defense markets. Intersil Corporation employs 5,800 worldwide and
utilizes the rich intellectual property heritage from Harris, GE Solid State
and RCA. The company's worldwide web site is located at
http://www.intersil.com .
This press release contains forward-looking statements made in reliance
upon the safe harbor provisions of the Private Securities Litigation Reform
Act of 1995. Such forward-looking statements reflect management's current
assumptions and estimates of future performance and economic conditions.
Specific risks include worldwide demand and product pricing for integrated
circuits, and reductions in the U.S. and worldwide defense and space budgets.
In addition, Intersil cautions investors that any forward-looking statements
are subject to risks and uncertainties that may cause actual results and
future trends and events to differ materially from those matters expressed in
or implied by such forward-looking statements.