Harris Semiconductor Introduces New Family of Rugged, High-Efficiency 1200V IGBTs
10 August 1998
Harris Semiconductor Introduces New Family of Rugged, High-Efficiency 1200V IGBTs
MELBOURNE, Fla.--Aug. 10, 1998--Harris' New Non-Punch Through (NPT) IGBTs Combine the Best
Features of Mosfets and Bipolar Transistors
Harris Semiconductor announced today the availability of a new insulated gate bipolar transistor (IGBT) family that combines the best features of MOSFETs and bipolar transistors -- high impedance and low on-state conduction losses. Harris' new non-punch through (NPT) series of N-channel 1200V IGBTs provide rugged, high-efficiency operation in a variety of high-voltage switching applications where low conduction losses are essential.
"The development of this process technology and product families underscore our commitment to the industrial marketplace," says Tom Daly, Harris' director of industrial power marketing. "Our new high voltage NPT technology eliminates the need to choose between fault tolerance and low losses -- our products provide designers the best of both worlds. What's more, we trim design time by offering temperature-compensated SABER models validated over a wide range of operating conditions."
Harris' NPT family includes 18-, 20-, 27- and 30-ampere IGBTs which provide low saturation voltage (VCE(SAT)) and reduced turnoff losses. They are immediately available in a variety of options and in B- and C-speed grades. The B-speed parts are tailored for use in switched-mode power supplies, welders and uninterruptible power supplies (UPS). The C-speed products are ideally suited for use in AC motor controls and motor drives.
The B-speed grade IGBTs, HGTG27N120BN and HGTG18N120BN, offer the designer significantly higher operating frequencies required for switch-mode power supply, welding and UPS applications. Both devices offer 40KHz operation at the rated current. Unlike competing NPT designs, Harris' B-speed products provide lower turn-off losses. The HGTG18N120BND includes an anti-parallel diode co-assembled in a TO-247 package.
The C-speed grade IGBTs, HGTG30N120CN and HGTG20N120CN, are ideally suited for AC motor control and motor drive applications where fault tolerance, low saturation voltage and switching losses improve circuit efficiency and reliability. Both IGBTs have a typical fall time of 350 nanoseconds at junction temperatures of 150(Degree)C and short circuit withstand times of 15 microseconds at 15V. The 30A device has typical collector-to-emitter saturation voltage of 2.1V at 25(Degree)C and 2.9V at 150(Degree)C. The positive temperature coefficient allows for easy paralleling of devices. The HGTG20N120CND includes an anti-parallel diode co-assembled in the same package.
Price and Availability
Harris 1200V NPT family is immediately available for sampling in TO-247 packaging. Production quantities will be available in September 1998. The C-speed part, HGTG30N120CN, will be available for $6.12 each in 1,000-piece quantities. The B-speed HGTG30N120BN will be available for the unit price of $6.18 in 1K quantities. Temperature-compensated SABER and P-SPICE device models are also available to validate operation of Harris' 1200V NPT family over a wide range of conditions. Complete datasheets are available on Harris Semiconductor's website at http://www.semi.harris.com/igbt.
About Harris' NPT Process
Harris' NPT IGBT is fabricated using float zone silicon material. Unlike punch- through designs, Harris' new NPT series feature low saturation voltage for high speed and rugged operation at 1200 volts. The NPT process yields a rugged, fault tolerant switch with operating frequencies tailored to specific applications.
Harris and the Industrial Market
These products are the first to be introduced following the formation of Harris' new Industrial Power business. Harris is committed to the development of high-value products to the industrial power market. The new business unit combines systems-level expertise with a vast portfolio of intelligent power, discrete power and suppression products in a voltage range of 100- to 1700-volts. Products include N- and P-channel MOSFETs, IGBTs, driver ICs and high speed rectifiers.
Harris Corporation's Semiconductor sector manufactures discrete semiconductors and integrated circuits and focuses research and development efforts on innovative new products for the communications and power markets. The company's broad portfolio of products serve many other markets including automotive, consumer electronics, telecommunications, multimedia, and military and space. The company has sales offices worldwide and manufacturing facilities in Palm Bay, Fla.; Mountaintop, Pa.; Findlay, Ohio; Dundalk, Ireland; and Kuala Lumpur, Malaysia.
Harris Corporation , with worldwide sales of more than $3.8 billion, is an international communications and electronics company that provides a wide range of products and services such as wireless and personal communications, digital television (HDTV), health care information, multi-media communications, automotive electronics, transportation, business information, defense communications and information, and Lanier office products.