TOKYO--March 6, 2013: Toshiba Corporation (TOKYO:6502) has launched a 100V low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as the latest addition to its line-up for automotive applications. The new product, "TK55S10N1", achieves low ON-resistance with a combination of a chip in the "U-MOS VIII-H series" fabricated with the latest 8th generation trench MOS process and a "DPAK+" package that utilizes copper connectors. The product is primarily suited for automotive applications, especially those that demand high-speed switching, such as switching regulators. Samples are available now with mass production scheduled to start in April 2013.
| Polarity | Part number |
Drain-to-source voltage |
Drain Current |
Series | ||||
| Nch | TK55S10N1 | 100 | 55 | U-MOS VIII-H | ||||
| Key Features | ||
| 1. | Low ON-resistance (VGS=10V) | |
| RDS(ON) = 5.5mΩ(typ.) | ||
| 2. | Low leakage current IDSS=10μA (max) (VDS=rated voltage) | |
| 3. | "DPAK+" package that realizes low-ON-resistance by utilizing Cu connectors. | |
| Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice. |