New 1200V/5A SiC Diodes from SemiSouth Offered in True Surface Mount DPAK Packaging
STARKVILLE, MS—September 19, 2011: SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has launched new 1200V/5A diodes in the true, compact DPAK (TO-252) surface mount packaging which provides the necessary creepage distance and does not require a center pin.
“We have designed these parts to be as user-friendly as possible”
Like many SiC diodes from SemiSouth, the new SDB05S120 parts feature a positive temperature coefficient for ease of paralleling. Switching behavior is independent of temperature and the devices have a maximum operating temperature of 175degC. The new diodes also have a zero reverse recovery current and voltage. They have a footprint of 0.385 x 0.260in and a profile of 0.090in.
"We have designed these parts to be as user-friendly as possible", explains SemiSouthâ's Vice President Sales & Marketing, Dieter Liesabeths, "with many features that enable designers to realise the benefits of SiC technology quickly and easily."
The major application for these new SiC diodes lies in photo-voltaic micro-inverters, but the devices are also highly suitable for use in SMPS, Power Factor Correction circuits, induction heaters, UPS and motor drives.
About SemiSouth Laboratories, Inc.
SemiSouth, a privately owned corporation with its main offices and foundry in Starkville, Mississippi, (USA), focuses on silicon carbide (SiC) power devices and electronics, targeting applications such as: solar inverters; power conversion in computing and network power supplies; variable-speed drives for industrial motors and hybrid electric vehicles; and products used in high-power, harsh-environment military and aerospace environments. The company was formed in 2000, has sold products globally through direct sales or distributors since 2005, and received a major growth investment from Power Integrations in 2010. It introduced the world's first commercial, cost-effective normally-off SiC JFETs in 2008, which have enabled world-record energy efficiencies for its customer's products.