EM Microelectronic Produces the World's First IC Operating Lower Than 0.5V Using Fully Depleted SOI Technology

    MARIN, Switzerland--Oct. 28, 2002--EM Microelectronic announced today that it is ready to start producing a high-performance, ultra-low-voltage and ultra-low-power integrated circuit using fully depleted silicon-on-insulator (FD SOI).
    This is believed to be the first IC in FD SOI operating at a guaranteed voltage lower than 0.5V over the whole voltage and temperature range.
    This breakthrough has been permitted by EM Microelectronic's unique expertise acquired over 25 years in designing and producing ultra-low-power and ultra-low-voltage integrated circuits for the microelectronic industry.
    "The chip being produced is a sophisticated circuit to be used in the watch industry, containing more than 50% of analog cells. The analog portion of the circuit is operating at 0.5V, while the digital part works even down to 0.35V," said Mougahed Darwish, president of the management board of EM Microelectronic. "We are also developing a voltage reset IC with an astonishingly low reset threshold voltage of 0.7V. This IC will be of ideal use with the coming generation of sub-1V microcontrollers, and is perfect in portable applications, which are becoming increasingly complex."
    Besides the well-known high-frequency applications that most semiconductor manufacturers are focusing on today using partially depleted (PD) SOI technologies, EM Microelectronic is developing its own 0.5um FD SOI process with properties including ultra-low threshold voltage down to 0.4V and high temperature operation up to 225 degrees C. As such, EM is the only European semiconductor manufacturer to produce FD SOI in 0.5um technology. The properties of this process include dual gates, 3 metal layers, silicide and elevated source and drain. Highly accurate and stable manufacturing capabilities allow EM to reach a very thin silicon film thickness of 40nm.
    Commercial use for the FD SOI technology is targeted at applications requiring either ultra-low-voltage operation or high performance at extremely high temperature. It is ideal for handheld and battery-powered applications. It also includes automotive engine control, field-powered RF tag used in very hot environments, automotive immobilization, smart card IC, well logging equipment and analog front-end for pressure, temperature, magnetic and optical sensors.
    FD SOI also has a bright future for use on system-on-chip since high component integration and low-power requirements drive the use for ultra-low voltage technologies. EM pursues an active development by integrating EEPROM memory cells to its process. As a leader and pioneer in this market, EM plans to offer foundry services at its headquarters for FD SOI to customers interested in using this advanced technology.

    About EM Microelectronic

    EM Microelectronic is a semiconductor manufacturer that designs and produces ultra-low-power, low-voltage, digital, analog and mixed-signal integrated circuits (ICs) for battery-operated and field-powered devices in consumer, automotive and industrial applications.
    The company's product portfolio includes RFID circuits and transponders; ultra-low-power microcontrollers; voltage reset ICs and microprocessor supervisors; regulators; smart card ICs; LCD drivers and displays; sensor and optoelectronic ICs; mixed analog and digital gate arrays; and ASICs. EM also produces LCD modules and offers bumping services.
    EM Microelectronic was founded in 1975 with corporate headquarters in Marin (Neuchatel), Switzerland, and North American headquarters in Colorado Springs, Colo. It is a company of The Swatch Group Ltd., the world's largest manufacturer of finished watches.
    Additional company and product information is available at www.emmicroelectronic.com.

    Glossary

    Silicon-on-insulator (SOI): Devices built with a thin non-conductive oxide layer inserted between the conductive bulk substrate and the active regions. MOS transistors built in SOI technology show superior performance in low-voltage operation. Partially depleted means that the top silicon is thick enough (100-200nm) for the depletion width not to reach the buried oxide so that a neutral region exists below the channel and depletion region. Partially depleted SOI best suits applications requiring a higher operation frequency. Fully depleted means that the top silicon is thinner (50nm or less) than the depletion width beneath the channel and the depletion region extends to the buried oxide. SOI realizes both ultra-low voltage and high-temperature operations.

    Editor's Note: Please send business inquiries to: EM Microelectronic, Rue des Sors 3, CH-2074 Marin, Switzerland, Ph: +41.(0)32.755 51 11, Fax: +41.(0)32.755 54 03; or info@emmicroelectronic.com.