Low-Voltage Power Bipolar Transistor from STMicroelectronics

GENEVA--Aug. 7, 2002-- STMicroelectronics today announced the STSA851 and STN851, two versions of a low-voltage power bipolar transistor that features high current-gain characteristics, very low collector-to-emitter saturation voltage, and fast switching speed. 

Both versions are aimed at emergency lighting and automotive applications, but serve equally well in voltage regulation; cold-cathode fluorescent lighting systems; alarm systems; high-efficiency low-voltage switching power supplies; and as relay drivers. 

Of the two devices, the STSA851 comes in a TO-92 package and is rated for 1.1 W of total power at 25(Degree)C ambient temperature. The STN851 comes in a SOT-223 and is rated for 1.6W. Both devices are manufactured using NPN planar technology and feature a base island layout that contributes to their exceptionally high gain and very low saturation voltage bringing cost and size reduction (same electrical performance with 30% silicon less) but keeping a high level of efficiency. 


    Main Electrical Characteristics:

P/N       Vces (V)    Vcesat  (mV)      Hfe (A)           Package
                    Ic=5A Ib=200mA    Ic=5A Vce=1V

STSA851    150      (Less than)450   (Greater than)90    TO-92(a)

STN851     150      (Less than)450   (Greater than)90    SOT-223

(a) Also available in Ammopak (STSA851-AP)