International Rectifier Introduces the Industry's First Q101-Qualified, SO-8 Dual MOSFETs Rated at 175 Degrees Celsius for Automotive Power Systems

    EL SEGUNDO, Calif.--May 1, 2002--International Rectifier, IR(R) , introduces the industry's first Q101-qualified, dual HEXFET(R) MOSFETs in the SO-8 package rated for repetitive avalanche up to a maximum junction temperature of 175 degrees Celsius. The new devices save up to 70% space and deliver improved ruggedness compared to alternative solutions available on the market today.
    The new IRF7341Q, IRF7314Q and IRF7103Q MOSFETs are specifically designed for automotive power systems such as drivers or relay replacements for anti-lock braking system (ABS) solenoid valves, electronic fuel injection (EFI) systems, airbag deployment circuits and other low-current applications.
    The new dual MOSFETs in the SO-8 package replace pairs of single MOSFETs in the larger SOT-223, providing space savings, reduced component count and simplified design.
    The new devices are the first dual MOSFETs in the SO-8 package that are Q101 qualified and with a maximum junction temperature of 175 degrees Celsius compared to 150 degrees currently available for surface mount packages. These devices further differentiate themselves from currently available surface-mount packages by offering a repetitive avalanche rating up to the maximum junction temperature, which provides the engineer with a tool to improve the ruggedness of this system.
    Tony Hendrix, Automotive Sector Director at International Rectifier, said, "IR's new automotive MOSFETs combine several innovative design techniques, creating a unique solution as the automotive market demands more ruggedness and higher density in power management components. This demonstrates IR's commitment to the continuous innovation required to meet the demands of automotive power systems as electronic motors replace belts and hydraulic systems."
    The new devices meet the Q101 automotive qualification specifications established devices designed for harsh automotive environments.

    Data sheets are on the IR Web site:
    IRF7341Q: http://www.irf.com/product-info/datasheets/data/irf7341q.pdf
    IRF7314Q: http://www.irf.com/product-info/datasheets/data/irf7314q.pdf
    IRF7103Q: http://www.irf.com/product-info/datasheets/data/irf7103q.pdf

    Pricing and Availability
    The new devices are available immediately. Pricing begins at US $0.37 each in 10,000-unit quantities for the IRF7103Q.

    About International Rectifier

    International Rectifier is recognized as a leading supplier of power semiconductors and systems solutions. IR's patented HEXFET(R) power MOSFETs, IGBTs and high-voltage ICs make electricity work smarter in industrial automation and controls, automotive electrical systems, consumer electronics, computers and peripherals, telecommunications, lighting, and satellite/launch vehicle applications. Go to www.irf.com for more information on International Rectifier products and services.

    Trademark Notice

    IR(R) and HEXFET(R) are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.