Power Mosfet Technologies Moves Forward With Patent Infringement Case Against Infineon and St

    DALLAS--May 17, 2001--The United States District Court for the Eastern District of Texas recently issued a pre-trial ruling in favor of Power Mosfet Technologies, L.L.C. (PMT) in its patent infringement lawsuit against Infineon Technologies AG and its subsidiaries (Infineon) and STMicroelectronics, N.V. and its subsidiaries (ST).
    U.S. District Judge David Folsom entered an Order adopting the recommendations of ¶ Dr. Jay Kesan, professor of patent law and electrical engineering at the University of Illinois at Champaign-Urbana, with one clarification. The Court's interpretation supports PMT's allegations that Infineon's CoolMOS and ST's MDMesh power MOSFETs infringe PMT's patent.
    "We are confident that we will succeed in helping PMT continue to protect its valuable patented technology from infringers such as Infineon and ST," said Michael W. Shore, Esq., attorney for PMT. "The Court's interpretation is certainly a step forward in PMT's battle for its legal rights against infringement. PMT's positions on the disputed terms were completely validated by the Court. We are fully prepared to present our case in August." The trial is set to begin on August 27, 2001.
    Power Mosfet Technologies, L.L.C. is a privately owned, Texas-based corporation specializing in the development and commercialization of cutting-edge semiconductor technologies. PMT's patent, U.S. Patent No. 5,216,275, is considered a pioneer in the field of superjunction technology. The `275 Patent discloses a novel power semiconductor structure that significantly reduces on-resistance and improves overall device performance.