Fairchild's 75V MOSFET Handles New 42V Automotive Applications

    SAN JOSE, Calif.--April 10, 2001--The new FDB06AN08A1 UltraFET(R) Trench MOSFET from Fairchild Semiconductor International is designed for high-current starter/alternator, electronic power steering, electric braking, valve timing and other 42V automotive battery applications requiring full device capability at low gate drive voltages.
    Employing Fairchild's patented, advanced trench topology, the FDB06AN08A1 die is more than 20 percent smaller than those of competing technologies. This is particularly significant in the starter/alternator application, where a large number of devices must be paralleled to accommodate starting currents of up to 1500A.
    As mechanical systems are replaced with electronics, the increase in automobile power requirements has prompted the transition from the traditional 12V to a 42V battery to limit current requirements and control wire size and cost. This new 75V MOSFET is designed specifically for these systems that will begin to appear in new car models as early as 2003.
    The FDB06AN08A1 N-Channel trench MOSFET features ultra-low RDS(on) (6.3 milliohm, max. at room temperature), 75V breakdown voltage, 175(degree) C maximum junction temperature, an internal gate resistor and unclamped inductive surge (UIS) capability for single (1200mJ @ 75A) and repetitive pulses. Additionally, the die size of the FDB06AN08A1 leaves a substantial amount of D2-Pak (TO263) space available, allowing for die size flexibility and the potential to further lower the RDS(on) for the same package size.

    The FDB06AN08A1 was developed and is manufactured at the Mountaintop, Pa.(1) location, long recognized by industry observers for its technical leadership in power discretes for the automotive industry.
    (1) Acquired in Fairchild's acquisition of Intersil's power
    discrete product line in March, 2001

    Price:          U.S.$3.20 each (1,000 pcs.)
    Availability:   Samples now; production volumes, July 2001