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Toshiba Launches New MOSFET "SSM3K337R" for Relay Drivers


toshiba (select to view enlarged photo)

TOKYO--June 21, 2013: Toshiba Corporation (TOKYO: 6502) today announced that it has launched a MOSFET, "SSM3K337R", for relay drivers. The new device uses an active clamp structure that prevents overvoltage when the inductive load of relay devices is switched off. Sample is available and mass production is scheduled to start in September.
Demand for relay drivers is growing for automobile, since the number of electric components equipped by automobile is increasing.
The "SSM3K337R" reduces ON-resistance by half and improves allowable power dissipation to approximately 1.6 times that of equivalent products.

Key Features
1. Active clamp structure reduces stress by inductive load of relay devices.
2. ON-resistance is reduced by half.
3. Allowable power dissipation is improved to approximately 1.6 times, with SOT-23F package.

Main Specifications

Package Part Number VDSS
(V)
VGSS
(V)
ID(DC)
(A)
RDS(ON) typ. (mΩ) Ciss
(pF)
Qg
@2A
(nC)

VGS=4V

VGS=4.5V

VGS=10V

SOT-23F
2.9 x 2.8mm
SSM3K337R 38 20 2 161 155 135 120 3.6

For more information about the product, please see the product page.
New Product Transistor